Managing Test Coverage Uncertainty due to Random Noise in Nano-CMOS: A Case-Study on an SRAM Array

Abstract

Static random access memories (SRAM) are a major constituent in high performance microprocessors and systems-on-a-chip. With scaling of technology, manufacturing process variations in SRAMs are of significant concern. SRAM cells that are marginal due to process variations suffer from stability issues where random thermal noise and random telegraph noise… (More)
DOI: 10.1109/TCAD.2015.2449236

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