Magnetoresistance of conductive filament in Ni/HfO2/Pt resistive switching memory
- S. Otsuka, Y. Hamada, D. Ito, T. Shimizu, S. Shingubara
- Jpn J Appl Phys., Vol. 54, pp. 05ED02–05ED02-5…
Resistive Random Access Memory (RRAM) can be regarded as a promising candidate on the manipulation of both electrical and magnetic properties. There is a widespread concern about the electrical manipulation of magnetic properties in RRAM devices. In our work, Co/HfO<inf>2</inf>/Pt RRAM device with magnetic conductive filament (CF) is designed and fabricated. Then the anisotropic magnetoresistance (AMR) effect on the magnetic CF is studied in order to find out the underlying nature of its transport. We measured the AMR by means of rotating the direction of the magnetic field and sweeping its magnitude, respectively. The results indicate that the direction of CF's easy-axis is perpendicular to the top electrode's plane. The maximum of magnetoresistance is found to appear when the angle between the direction of magnetic field and that of electric current in the CF is about 30°, and it varies slightly at different temperature.