Corpus ID: 118281259

Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts

@article{Nakane2010MagnetoresistanceOA,
  title={Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts},
  author={Ryosho Nakane and Tomoyuki Harada and Kuniaki Sugiura and Satoshi Sugahara and Masaaki Tanaka},
  journal={arXiv: Materials Science},
  year={2010}
}
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed spin-valve-type hysteretic behavior, when the measurements were performed with constant source-drain and source-gate biases. By comparing with… Expand