Magnetoamplification in a bipolar magnetic junction transistor.

@article{Rangaraju2010MagnetoamplificationIA,
  title={Magnetoamplification in a bipolar magnetic junction transistor.},
  author={Nikhil Rangaraju and John A. Peters and Bruce W. Wessels},
  journal={Physical review letters},
  year={2010},
  volume={105 11},
  pages={117202}
}
We have demonstrated the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. For an InMnAs p-n-p transistor magnetoamplification is observed at room temperature. The observed magnetoamplification is attributed to the magnetoresistance of the magnetic semiconductor InMnAs heterojunction. The magnetic field dependence of the transistor characteristics confirm that the magnetoamplification results from the junction magnetoresistance. To describe the experimentally… CONTINUE READING

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