Magnetic memory using magnetic domain motion

  title={Magnetic memory using magnetic domain motion},
  author={Kim Ki Won and 양택호 and Youngjeen Cho and 황인준},
Possible to switch the direction of magnetization to form a recording layer having a plurality of magnetic domains having a perpendicular magnetization direction can be formed to correspond to a partial region of the recording layer and includes a reference layer having a fixed magnetization direction, and the recording layer, the reference layer of and the data bit consisting of a magnetic domain corresponding to an effective size of the data storage cell that can be stored in an array is… CONTINUE READING

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