Magnetic field driven redistribution between extended and localized electronic states in high-mobility Si MOSFETs at low temperatures

@article{Pudalov2021MagneticFD,
  title={Magnetic field driven redistribution between extended and localized electronic states in high-mobility Si MOSFETs at low temperatures},
  author={Vladimir M. Pudalov and Michael E. Gershenson},
  journal={Physical Review B},
  year={2021}
}
In the study of oscillatory electron transport in high-mobility Si MOSFETs at low temperatures we observed two correlated effects in weak in-plane magnetic fields: a steep decrease of the magnetic susceptibility χ(H) and an increase of the concentration of mobile carriers n(H). We suggest a phenomenological model of the magnetic-field-driven redistribution between the extended and localized electronic states that qualitatively explains both effects. We argue that the redistribution is mainly… Expand

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