Magnetic and structural properties of Co ion-implanted GaN

@article{Kim2006MagneticAS,
  title={Magnetic and structural properties of Co ion-implanted GaN},
  author={Woochul Kim and Hee Jae Kang and Suhk Kun Oh and Sangwon Shin and Jong-Han Lee and Jonghan Song and Sam Kyu Noh and Sang Jun Oh and Chul Sung Kim},
  journal={IEEE Transactions on Nanotechnology},
  year={2006},
  volume={5},
  pages={149-151}
}
A GaN epilayer was grown on Al/sub 2/O/sub 3/ substrate by metal-organic chemical vapor deposition, and Co/sup -/ ions with a dose of 3/spl times/10/sup 16/ cm/sup -2/ were implanted into GaN at 350/spl deg/C. The implanted samples were postannealed at 700/spl deg/C-900/spl deg/C to recrystallize the samples and to remove implantation damage. We have investigated the magnetic and structural properties of Co ion-implanted GaN by using X-ray diffraction (XRD), superconducting quantum interference… CONTINUE READING
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