Magnesium acceptor levels in GaN studied by photoluminescence

@article{Viswanath1998MagnesiumAL,
  title={Magnesium acceptor levels in GaN studied by photoluminescence},
  author={A. K. Viswanath and E. Shin and Joo In Lee and Sungkyu Yu and D. Kim and B. Kim and Yoonho Choi and C. Hong},
  journal={Journal of Applied Physics},
  year={1998},
  volume={83},
  pages={2272-2275}
}
Magnesium doped GaN epitaxial layers were grown by metal-organic chemical vapor deposition on sapphire substrate. Energy levels of these acceptors were investigated by systematic photoluminescence measurements in the temperature range of 12–300 K. Magnesium concentration was varied from <1×1019 to higher than 5×1019 cm−3. Photoluminescence measurements were made on the as-grown and annealed samples. We have observed various transitions related to donor to acceptor and their phonon replicas… Expand
Magnesium doped GaN grown by MOCVD
Study of magnesium doped gallium nitride films grown by low pressure-metalorganic chemical vapor deposition
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  • 2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)
  • 2009
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