MOVPE growth of lattice-mismatched Al0.88In0.12As on GaAs (100) for space solar cell applications

@inproceedings{Sinharoy2000MOVPEGO,
  title={MOVPE growth of lattice-mismatched Al0.88In0.12As on GaAs (100) for space solar cell applications},
  author={Samar Sinharoy and Mark A. Stan and A. M. Pal and Victor G. Weizer and Mark A. Smith and David M. Wilt and K. Reinhardt},
  year={2000}
}
Abstract We report, for the first time, the growth and characterization of lattice-mismatched Al 0.88 In 0.12 As on GaAs (1 0 0) as part of a program to develop a high-efficiency, triple-junction space solar cell. The expected practical efficiency of this cell is 31%. The proposed triple-junction cell consists of a 2.1 -eV Al 0.88 In 0.12 As top cell, a 1.6 -eV In 0.48 Ga 0.52 As 0.23 P 0.77 middle cell, and a 1.2 -eV In 0.13 Ga 0.87 As bottom cell. The Al 0.88 In 0.12 As layers were grown on… CONTINUE READING