MOSFET switching behaviour under influence of PCB stray inductance

@article{Teulings1996MOSFETSB,
  title={MOSFET switching behaviour under influence of PCB stray inductance},
  author={W. Teulings and J. Schanen and J. Roudet},
  journal={IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting},
  year={1996},
  volume={3},
  pages={1449-1453 vol.3}
}
  • W. Teulings, J. Schanen, J. Roudet
  • Published 1996
  • Engineering
  • IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting
An analytical expression is derived for the power MOSFET turn-off overvoltage, including the influence of PCB interconnects. The entire PCB is modeled by means of the partial element equivalent circuit (PEEC) method. The PCB model associated with a simple MOSFET model permits computation of maximum overvoltage with good precision. This expression can be used to design PCBs and choose a type of MOSFET respecting MOSFET maximum voltage ratings. The analytical expression has been verified by… Expand

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