MOSFET models at the edge of 100-nm sizes

  title={MOSFET models at the edge of 100-nm sizes},
  author={George Vasilev Angelov and Tihomir Borisov Takov and Sa{\vs}a Risti{\'c}},
  journal={2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)},
  pages={295-298 vol.1}
The paper reviews the mainstream MOSFET advanced models with their physical relevance and mathematical techniques. The basics of the respective modeling approaches are discussed showing the principle advantages of the surface potential based approach for describing sub-100-nm devices. Major short-channel and quantum effects in the models are outlined… CONTINUE READING