MOS voltage reference based on polysilicon gate work function difference

@article{Oguey1979MOSVR,
  title={MOS voltage reference based on polysilicon gate work function difference},
  author={H. Oguey and Beate Gerber},
  journal={Fifth European Solid State Circuits Conference - ESSCIRC 79},
  year={1979},
  pages={28-30}
}
A voltage reference in CMOS technology is based upon transistor pairs of the same type except for the opposite doping type of their polysilicon gates. At identical drain currents, the gate voltage difference, close to the silicon bandgap, is 1.2 V/spl plusmn/0.06 V. Circuits for a positive and for a negative voltage reference are presented. Digital voltage… CONTINUE READING