MOS transistors operated in the lateral bipolar mode and their application in CMOS technology

@article{Vittoz1983MOSTO,
  title={MOS transistors operated in the lateral bipolar mode and their application in CMOS technology},
  author={E. Vittoz},
  journal={IEEE Journal of Solid-State Circuits},
  year={1983},
  volume={18},
  pages={273-279}
}
  • E. Vittoz
  • Published 1983 in IEEE Journal of Solid-State Circuits
Operation of an MOS transistor as a lateral bipolar is described and analyzed qualitatively. It yields a good bipolar transistor that is fully compatible with any bulk CMOS technology. Experimental results show that high /spl beta/-gain can be achieved and that matching and 1/f noise properties are much better than in MOS operation. Examples of experimental circuits in CMOS technology illustrate the major advantages that this device offers. A multiple current mirror achieves higher accuracy… CONTINUE READING
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