MOS Hardening Approaches for Low-Temperature Applications

@article{Srour1977MOSHA,
  title={MOS Hardening Approaches for Low-Temperature Applications},
  author={J. R. Srour and K. Y. Chiu},
  journal={IEEE Transactions on Nuclear Science},
  year={1977},
  volume={24},
  pages={2140-2146}
}
Charge buildup in irradiated MOS devices is significantly more severe at low temperatures than at room temperature. Approaches for counteracting this problem are considered in this paper, including: (1) careful selection of the applied field; (2) ion implantation of the oxide; (3) use of a thin oxide. Experimental and analytical results are presented and it is demonstrated that the applied field dependence of flatband voltage shift in MOS capacitors irradiated at 77°K can be accounted for in… CONTINUE READING

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