$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing">

MOS Devices With High-κ (ZrO<formula formulatype="inline"><tex Notation="TeX">$_2$</tex></formula>) <formula formulatype="inline"><tex Notation="TeX">$_x$</tex></formula>(La <formula formulatype="inline"><tex Notation="TeX">$_2$</tex></formula>O<formula formulatype="inline"><tex Notation="TeX">$_3$</tex></formula>) <formula formulatype="inline"><tex Notation="TeX">$_{1-x}$</tex></formula> Alloy as Gate Dielectric Formed by Depositing ZrO <formula formulatype="inline"><tex Notation="TeX">$_2$</tex></formula>/La<formula formulatype="inline"><tex Notation="TeX">$_2$</tex></formula>O <formula formulatype="inline"><tex Notation="TeX">$_3$</tex></formula>/ZrO<formula formulatype="inline"><tex Notation="TeX">$_2$</tex></formula> Laminate and Annealing

@article{Wu2012MOSDW,
  title={MOS Devices With High-κ (ZrO<formula formulatype="inline"><tex Notation="TeX">\$_2\$</tex></formula>) <formula formulatype="inline"><tex Notation="TeX">\$_x\$</tex></formula>(La <formula formulatype="inline"><tex Notation="TeX">\$_2\$</tex></formula>O<formula formulatype="inline"><tex Notation="TeX">\$_3\$</tex></formula>) <formula formulatype="inline"><tex Notation="TeX">\$_\{1-x\}\$</tex></formula> Alloy as Gate Dielectric Formed by Depositing ZrO <formula formulatype="inline"><tex Notation="TeX">\$_2\$</tex></formula>/La<formula formulatype="inline"><tex Notation="TeX">\$_2\$</tex></formula>O <formula formulatype="inline"><tex Notation="TeX">\$_3\$</tex></formula>/ZrO<formula formulatype="inline"><tex Notation="TeX">\$_2\$</tex></formula> Laminate and Annealing},
  author={Yung-Hsien Wu and Lun-Lun Chen and Rong-Jhe Lyu and Jia-Rong Wu and Min-Lin Wu and Chia-Chun Lin},
  journal={IEEE Transactions on Nanotechnology},
  year={2012},
  volume={11},
  pages={483-491}
}
An amorphous (ZrO<sub>2</sub>)<i>x</i>(La<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> alloy formed by depositing a ZrO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> laminate and a subsequent annealing was employed as the gate dielectric for metal-oxide-semiconductor (MOS) devices. The (ZrO<sub>2</sub>)<sub>x</sub>(La<sub>2</sub>O<sub>3</sub>)<sub>1-x… CONTINUE READING