MOS Characteristics of C-Face 4H-SiC

@article{Chen2010MOSCO,
  title={MOS Characteristics of C-Face 4H-SiC},
  author={Z. Chen and Ayayi C. Ahyi and X. Zhu and M. Li and Tamara Isaacs-Smith and J. R. Williams and L. C. Feldman},
  journal={Journal of Electronic Materials},
  year={2010},
  volume={39},
  pages={526-529}
}
Metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide–semiconductor (O–S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (Dit). Direct oxidation/passivation in NO yielded somewhat better I–V characteristics, though all… 

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