MOS Area Sensor: Part II - Low-Noise MOS Area Sensor with Antiblooming Photodiodes

  title={MOS Area Sensor: Part II - Low-Noise MOS Area Sensor with Antiblooming Photodiodes},
  author={Shigeo Ohba and Mitsuo Nakai and Hiroshi Ando and S. Hanamura and S. Shimda and K. Satoh and Kohta Takahashi and Masaharu Kubo and Takao Fujita},
  journal={IEEE Journal of Solid-State Circuits},
The development of a high-sensitivity 320 X 244 element MOS area sensor and a novel fixed pattern noise (FPN) suppressing circuit are reported in this paper. The new device incorporates p/sup +/-n/sup +/ high-C photodiodes and double-diffused sense lines. The p/sup +/-n/sup +/ high-C photodiodes provide a large dynamic range and a large saturation signat of 1.4 /spl mu/A with 6-1x W-lamp illumination. The double-diffused sense lines are introduced to vastly improve blooming characteristics… CONTINUE READING


Publications referenced by this paper.
Showing 1-7 of 7 references

Charge injection imaging

  • M. G. Kovac, F. V. Shallcross
  • IEEE Trans . Electron Devices
  • 1973

Solid state Si image sensor and its design considerations

  • S. Akabosbi T. Ando, H. Ishihara
  • 1972

An NPN structure 484 X 384 MOS imager for a single - chip color camera , ” in ISSCC Dig . Tech . Papers , p . 192 , 1979 . K . Horii , “ 512 X 486 cetl CCD image sensor

  • I. Takemoto Koike, K. Sate, H. Matsumaru, M. Ashikawa, M. Kubo
  • IEEE Trans . Electron Devices IEEE Trans…

Charge - coupled area image sensor using three levels of polysilicon

  • T. A. Shankoff

Similar Papers

Loading similar papers…