MOS Area Sensor: Part II - Low-Noise MOS Area Sensor with Antiblooming Photodiodes

@article{Ohba1980MOSAS,
  title={MOS Area Sensor: Part II - Low-Noise MOS Area Sensor with Antiblooming Photodiodes},
  author={Shigeo Ohba and Mitsuo Nakai and Hiroshi Ando and S. Hanamura and S. Shimda and K. Satoh and Kohta Takahashi and Masaharu Kubo and Takao Fujita},
  journal={IEEE Journal of Solid-State Circuits},
  year={1980},
  volume={15},
  pages={747-752}
}
The development of a high-sensitivity 320 X 244 element MOS area sensor and a novel fixed pattern noise (FPN) suppressing circuit are reported in this paper. The new device incorporates p/sup +/-n/sup +/ high-C photodiodes and double-diffused sense lines. The p/sup +/-n/sup +/ high-C photodiodes provide a large dynamic range and a large saturation signat of 1.4 /spl mu/A with 6-1x W-lamp illumination. The double-diffused sense lines are introduced to vastly improve blooming characteristics… CONTINUE READING

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