MOJ Solar and Photoenergy Systems Reliability Challenges of Nanoscale Avalanche Photodiodes

@inproceedings{2018MOJSA,
  title={MOJ Solar and Photoenergy Systems Reliability Challenges of Nanoscale Avalanche Photodiodes},
  author={},
  year={2018}
}
  • Published 2018
Figure 1 shows the general device schematics and electric field profile of an APD device. For the top-illumination APD illustrated in Figure 1, the top layer is a heavily p-doped InGaAs layer that forms Ohmic contact with the p-metal. The next is an intrinsic In0.53Ga0.47 as absorption layer, which has a band gap energy of 0.75eV, used to absorb light [5]. To achieve lattice match to InP substrate, InAlAs is widely used for the field control and multiplication layers. The electric field reaches… CONTINUE READING

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