MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer

@article{Ma2006MOCVDGA,
  title={MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer},
  author={Zhiyong Ma and Xiaoliang Wang and Guoxin Hu and Junxue Ran and Xinhua Wang and Baozhu Wang and Weijun Luo and Jianpin Li},
  journal={2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings},
  year={2006},
  pages={917-919}
}
Unintentionally doped AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with compositionally step-graded AlGaN barrier layer were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The HEMT structure exhibited typical two-dimensional electron gas (2DEG) mobility of 1600cm2/Vs at room temperature and 6412cm2/Vs at 79K with almost equal 2DEG concentration of 1.0times1013/cm2. The 50mm HEMT wafer exhibited an average sheet resistance of 318.0Omega… CONTINUE READING