MNOS load device

@inproceedings{Lin1969MNOSLD,
  title={MNOS load device},
  author={H. C. Lin and Charles J. Varker},
  year={1969}
}
Metal-nitride-oxide-semiconductor (MNOS) field-effect transistors can be changed from enhancement mode to depletion mode after the application of polarizing voltage. When such a polarized MNOS device is used as a load in a switching circuit, the supply voltage and the rise time are reduced. 

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