METALS CONTACTS ON CLEAVED SILICON SURFACES

@article{Archer1963METALSCO,
  title={METALS CONTACTS ON CLEAVED SILICON SURFACES},
  author={R. J. Archer and M. Atalla},
  journal={Annals of the New York Academy of Sciences},
  year={1963},
  volume={101}
}
Applied reverse bias. Negative of intercept on V , axis of plot of 1/C2 versus TI, . Energy gap in semiconductor, 1.100 ev for silicon. Potential drop across separation between metal and semiconductor at equilibrium. Potential drop across separation between metal and semiconductor with applied bias V , . Work function of metal. Electronegativity of semiconductor. Charge in space charge region in semiconductor. Charge in surface states on semiconductor (positive for donor and 
87 Citations

References

SHOWING 1-10 OF 11 REFERENCES
57. 1955. Phys. Rev. 99: 367. 1960. Intern
  • J. Phys. Chem. Solids
  • 1959
Electronic Semiconductors. : 356, 364
  • 1958
CHEMICAL RUBBER PUBLISH~NG Co
  • Proc. Phys. Soc. London
  • 1957
Handbook of Chemistry and Physics Ed. 32. : 2126
  • 1950
...
1
2
...