MEASUREMENT OF THE MINORITY CARRIER DIFFUSION LENGTH AND EDGE SURFACE-RECOMBINATION VELOCITY IN InP

@inproceedings{HakimzadehMEASUREMENTOT,
  title={MEASUREMENT OF THE MINORITY CARRIER DIFFUSION LENGTH AND EDGE SURFACE-RECOMBINATION VELOCITY IN InP},
  author={Roshanak Hakimzadeh and Sheila and Bailey}
}
  • Roshanak Hakimzadeh, Sheila, Bailey
A scanning electron microscope (SEM) was used to measure the electron (minority carrier) diffusion length (L=) and the edge surface-recombination velocity (V.) in zinc-doped Czochralski-grown InP wafers. Electron-beam-induced current (EBIC) profiles were obtained in specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An… CONTINUE READING