MEASUREMENT OF MINORITY CARRIER LIFETIME IN Ge AND Si BY THE SPREADING-RESISTANCEPHOTO-DECAY METHOD

@inproceedings{Weihwa2005MEASUREMENTOM,
  title={MEASUREMENT OF MINORITY CARRIER LIFETIME IN Ge AND Si BY THE SPREADING-RESISTANCEPHOTO-DECAY METHOD},
  author={Zhuang Wei-hwa and Pan Gui-sheng},
  year={2005}
}
The photo-conductive decay of the spreading resistance of Ge and Si is investigated. The influence of the surface recombination velocity and the depth of absorption of the exciting light on the shape of the decay curve are studied in detail. The decay curves obtained are consistent with those predicted by the theory. The conditions required for accurate measurement of bulk lifetime are also discussed. 

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