MCDHF and RCI calculations of energy levels, lifetimes, and transition rates in Si III and Si IV

  title={MCDHF and RCI calculations of energy levels, lifetimes, and transition rates in Si III and Si IV},
  author={B. Atalay and Tomas Brage and Per J{\"o}nsson and Henrik Hartman},
  journal={Astronomy \& Astrophysics},
We present extensive multiconfiguration Dirac-Hartree-Fock and relativistic configuration interaction calculations including 106 states in doubly ionized silicon (Si III) and 45 states in triply ionized silicon (Si IV), which are important for astrophysical determination of plasma properties in different objects. These calculations represents an important extension and improvement of earlier calculations especially for Si III. The calculations are in good agreement with available experiments… 
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