Lumped element thermal modeling of GaN-Based HEMTs

@article{Bertoluzza2009LumpedET,
  title={Lumped element thermal modeling of GaN-Based HEMTs},
  author={F. Bertoluzza and Giovanna Sozzi and Nicola Delmonte and Roberto Menozzi},
  journal={2009 IEEE MTT-S International Microwave Symposium Digest},
  year={2009},
  pages={973-976}
}
This paper shows a practical approach to GaN-based HEMT self-consistent electro-thermal simulation for circuit modeling and reliability estimation. A physical-level lumped element dynamic thermal network able to describe the two-dimensional device geometry is self-consistently coupled with an electro-thermal compact large-signal model. The results obtained with the lumped-element thermal network are compared with finite-element simulations and shown to provide valuable estimates of the thermal… CONTINUE READING

References

Publications referenced by this paper.
Showing 1-6 of 6 references

Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions

  • Y. Deng at al.
  • Solid-State Electron., vol. 52, pp. 1106-1113…
  • 2008
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