• DOI:10.1063/1.106906
• Corpus ID: 85510673

Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen content

@article{Baillargeon1992LuminescenceQA,
  title={Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen content},
  author={James N. Baillargeon and Keh-Yung Y. Cheng and Gloria Emilia Hofler and Paul J. Pearah and Kuang Chien Hsieh},
  journal={Applied Physics Letters},
  year={1992},
  volume={60},
  pages={2540-2542}
}

• J. Baillargeon, K. Cheng, +2 authors K. Hsieh
• Published 18 May 1992
• Materials Science
• Applied Physics Letters

A study of the luminescence properties of epitaxial GaP containing atomic N grown by molecular beam epitaxy using NH3 and PH3 as the column V sources was conducted. The 77 K photoluminescence spectra of the N‐doped epitaxial GaP showed a continuous redshift, from 5691 A (2.18 eV) to 6600 A (1.88 eV), resulted when the N concentration exceeded ∼5–7×1019 cm−3. This energy shift was found to be consistent with energy gap predictions using the dielectric theory of electronegativity for the GaP1−xNx system. The data also indicate that the emission intensity was maximum for N∼1×1020 cm−3, and then monotonically decreases with increasing N content. This is consistent with the formation of an indirect band‐gap semiconductor.