Luminescence decay in glow-discharge deposited amorphous silicon

@inproceedings{Tsang1978LuminescenceDI,
  title={Luminescence decay in glow-discharge deposited amorphous silicon},
  author={Cl Tsang and Robert A. Street},
  year={1978}
}
Abstract The photoluminescence decay of glow-discharge-deposited amorphous silicon is reported. The low temperature radiative lifetime of the broad luminescence band near 1·3 eV is found to be about 30 μs, and is independent of luminescence energy. The long lifetime is possibly due to weak electron-hole overlap. A competing non-radiative process dominates in weakly luminescent doped and undoped samples, and is thought to be due to tunnelling of an exciton to a nearby defect.