Luminescence associated with stacking faults in GaN

@article{Lahnemann2014LuminescenceAW,
  title={Luminescence associated with stacking faults in GaN},
  author={Jonas Lahnemann and U. Jahn and Oliver Brandt and Timur Flissikowski and Pınar Doğan and Holger T. Grahn},
  journal={Journal of Physics D},
  year={2014},
  volume={47},
  pages={423001}
}
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence… Expand
Polarization of stacking fault related luminescence in GaN nanorods
Linear polarization properties of light emission are presented for GaN nanorods (NRs) grown along [0001] direction on Si(111) substrates by direct-current magnetron sputter epitaxy. The near band gapExpand
Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN
Heteroepitaxial semipolar and nonpolar GaN layers often suffer from high densities of extended defects including basal plane stacking faults (BSFs). BSFs which are considered as inclusions of cubicExpand
Crystal lattice defects as natural light emitting nanostructures in semiconductors
The review summarizes previous and very recent data on the luminescent properties of natural low-dimensional nanostructures in tetrahedrally coordinated semiconductors which are two particular typesExpand
Stacking fault emission in GaN: Influence of n-type doping
We present spatially and spectrally resolved cathodoluminescence investigations on the cross section of semipolar (112¯2) gallium nitride epitaxial layers with high background doping level. TheExpand
Optical properties of defects in nitride semiconductors
Group III nitrides are promising materials for light emitting diodes (LEDs). The occurrence of structural defects strongly affects the efficiency of these LEDs. We investigate the optical propertiesExpand
Radial Stark Effect in (In,Ga)N Nanowires.
TLDR
It is proposed that the radial Stark effect is responsible for the broadband absorption of (In,Ga)N nanowires across the entire visible range, which makes these nanostructures a promising platform for solar energy applications. Expand
Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN
Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means ofExpand
Strong carrier localization in stacking faults in semipolar (11-22) GaN
The effects of stacking faults (SFs) on optical processes in epitaxially grown semipolar (1122) GaN on m-sapphire substrate have been investigated in detail using steady-state photoluminescence (PL)Expand
Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells
We report the growth of green emitting InGaN quantum wells (QWs) by metal-organic vapor-phase epitaxy (MOVPE) on three-dimensional GaN templates. The {10 (1) over bar1} facets of GaN pyramids,Expand
Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 101¯1) semipolar GaN template
In this work, I2-type basal-plane stacking faults (BSFs) were observed in In0.25Ga0.75N multiple quantum wells (MQWs) grown on a ( 101¯1) semipolar GaN template by high-resolution transmissionExpand
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 103 REFERENCES
ENERGETICS AND ELECTRONIC STRUCTURE OF STACKING FAULTS IN ALN, GAN, AND INN
Basal-plane stacking faults in wurtzite AlN, GaN, and InN are studied using density-functionalpseudopotential calculations. The formation energies follow the trend exhibited for theExpand
Luminescence from stacking faults in gallium nitride
A direct correlation has been established between stacking faults in a-plane GaN epilayers and luminescence peaks in the 3.29–3.41 eV range. The structural features of the stacking faults wereExpand
Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults
The properties and nature of a highly structured photoluminescence system observed at 1.7 K in high quality bulk GaN crystals grown from a Na/Ga flux are investigated. As many as eight distinctExpand
Dynamics of stacking faults luminescence in GaN/Si nanowires
Abstract Evidences are shown that excitons at stacking faults (SFs) in GaN nanowires (NWs) behave like 2-dimentional particles in quantum wells. The SFs were studied in samples of coalescent GaNExpand
Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN
We correlate structure analyzed by transmission electron microscopy with photo- and cathodoluminescence studies of GaN/Al 2 O 3 (0001) and GaN/SiC(0001) and show that an additional UV line atExpand
Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates
The microstructure and luminescence properties of a series of GaN epilayers grown on sapphire and SiC substrates with various misorientations have been correlated to assess the origins of theExpand
Importance of excitonic effects and the question of internal electric fields in stacking faults and
We compute using envelope function calculations the energy and the oscillator strength of excitons in zinc-blende/wurtzite quantum wells (QWs), such as those that appear in many examples ofExpand
Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires
The optical and structural properties of wurtzite GaN nanowires containing zinc-blende GaN inclusions of different thicknesses are investigated. Micro-photoluminescence spectra of single nanowiresExpand
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band isExpand
One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells
In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce theExpand
...
1
2
3
4
5
...