Luminescence associated with stacking faults in GaN

  title={Luminescence associated with stacking faults in GaN},
  author={Jonas Lahnemann and U. Jahn and Oliver Brandt and Timur Flissikowski and Pınar Doğan and Holger T. Grahn},
  journal={Journal of Physics D},
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence… Expand
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