Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT.

@article{Zhou2015LowVA,
  title={Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT.},
  author={Changjian Zhou and Xinsheng Wang and Salahuddin Raju and Ziyuan Lin and Daniel Villaroman and Baoling Huang and Helen Lai-Wa Chan and Mansun Chan and Yang Chai},
  journal={Nanoscale},
  year={2015},
  volume={7 19},
  pages={8695-700}
}
MoS2 and other atomic-level thick layered materials have been shown to have a high potential for outperforming Si transistors at the scaling limit. In this work, we demonstrate a MoS2 transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of ∼1.1 nm has been obtained by using ultra high-k gate dielectric Pb(Zr0.52Ti0.48)O3. The low threshold voltage (<0.5 V) is comparable to that of the liquid/gel gated MoS2 transistor. The small sub-threshold swing of 85… CONTINUE READING
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