Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

  title={Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 $\mu$m at room temperature},
  author={P. Schmiedeke and A. Thurn and Sonja Matich and Markus D{\"o}blinger and Jonathan J. Finley and Gregor Koblm{\"u}ller},
  journal={Applied Physics Letters},
Realizing telecom-band lasing in GaAs-based nanowires (NW) with low bandgap gain media has proven to be notoriously difficult due to the high compressive strain built up in the active regions. Here, we demonstrate an advanced coaxial GaAs-InGaAs multi-quantum well (MQW) nanowire laser that solves previous limitations by the introduction of a strain compensating InAlGaAs buffer layer between the GaAs core and the MQW active region. Using a buffer layer thickness comparable to the core diameter… 
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