Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

@article{Schmiedeke2021LowthresholdSI,
  title={Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 $\mu$m at room temperature},
  author={P. Schmiedeke and A. Thurn and Sonja Matich and Markus D{\"o}blinger and Jonathan J. Finley and Gregor Koblm{\"u}ller},
  journal={Applied Physics Letters},
  year={2021},
  volume={118},
  pages={221103}
}
Realizing telecom-band lasing in GaAs-based nanowires (NW) with low bandgap gain media has proven to be notoriously difficult due to the high compressive strain built up in the active regions. Here, we demonstrate an advanced coaxial GaAs-InGaAs multi-quantum well (MQW) nanowire laser that solves previous limitations by the introduction of a strain compensating InAlGaAs buffer layer between the GaAs core and the MQW active region. Using a buffer layer thickness comparable to the core diameter… 
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References

SHOWING 1-10 OF 37 REFERENCES
Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires.
TLDR
Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.
Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature.
TLDR
By carefully designing the materials composition profile, high-performance infrared NW lasers can be realised using III/V semiconductors using core-shell GaAs-AlGaAs nanowires.
Highly strained 1.24-mum InGaAs/GaAs quantum-well lasers
Highly strained InGaAs/GaAs quantum wells grown at very low temperature (380 °C) have been studied. The critical thickness of the In0.38Ga0.62As quantum well is 8.8 nm and the photoluminescence peak
Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature.
TLDR
The realization of single-mode and room-temperature lasing from 890 to 990 nm is reported, utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as a gain medium under optical pumping.
Room-temperature lasing in a single nanowire with quantum dots
Nanowire (NW) lasers have recently attracted increasing attention as ultra-small, highly-efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although
Large-Scale Statistics for Threshold Optimization of Optically Pumped Nanowire Lasers.
TLDR
For single nanowire lasers based on bottom-up III-V materials, it is found that low threshold is closely linked to longer lasing wavelength caused by losses in the core, providing a route to optimized future low-threshold devices.
GaAs–AlGaAs core–shell nanowire lasers on silicon: invited review
Semiconductor nanowire (NW) lasers provide significant potential to create a new generation of lasers and on-chip coherent light sources by virtue of their ability to operate as single mode optical
Near-Infrared Lasing at 1 μm from a Dilute-Nitride-Based Multishell Nanowire.
TLDR
The results, therefore, demonstrate a promising alternative route to achieve room-temperature NIR NW lasers thanks to the excellent alloy tunability and superior optical performance of such dilute nitride materials.
Monolithically Integrated High-β Nanowire Lasers on Silicon.
TLDR
It is demonstrated how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature.
Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths
Future expansion of computing capabilities relies on a reduction of energy consumption in silicon-based integrated circuits. A promising solution is to replace electrical wires with optical
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