Low-threshold high-T/sub 0/ 1.3-/spl mu/m InAs quantum-dot lasers due to p-type modulation doping of the active region

@article{Shchekin2002LowthresholdH0,
  title={Low-threshold high-T/sub 0/ 1.3-/spl mu/m InAs quantum-dot lasers due to p-type modulation doping of the active region},
  author={O N Shchekin and D. A. Deppe},
  journal={IEEE Photonics Technology Letters},
  year={2002},
  volume={14},
  pages={1231-1233}
}
P-type doping is used to demonstrate high-To, low-threshold 1-3 /spl mu/m InAs quantum-dot lasers. A 5-/spl mu/m-wide oxide confined stripe laser with a 700-/spl mu/m-long cavity exhibits a pulsed T/sub 0/ = 213 K (196 K CW) from 0/spl deg/C to 80/spl deg/C. At room temperature, the devices have a CW threshold current of /spl sim/4.4 mA with an output power… CONTINUE READING