Low threshold current density of InAs quantum dash laser on InP „ 100 ... through optimizing double cap technique

@inproceedings{Zhou2009LowTC,
  title={Low threshold current density of InAs quantum dash laser on InP „ 100 ... through optimizing double cap technique},
  author={Dayong Zhou and Rozenn Piron and M. Dontabactouny and Olivier Dehaese and Fr{\'e}d{\'e}ric Grillot and Thomas Batt{\'e} and Karine Tavernier and Jacky Even and Slimane Loualiche},
  year={2009}
}
We report on the uniformity improvement of InAs quantum dashes !QDHs" grown by molecular beam epitaxy on InP !100" through optimizing double cap technique. Broad-area lasers were fabricated with an emission wavelength of 1.58 !m. A threshold current density of 360 A /cm2 was achieved for a five stack QDH structure and a cavity length of 1.2 mm. This results from a reduced inhomogeneous broadening !62 meV" and lower internal optical losses !7 cm−1". The achievement paves the way toward ultralow… CONTINUE READING