Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

@inproceedings{Feng2011LowTS,
  title={Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory},
  author={Li-Wei Feng and Cheng-Kang Chang and Ting-Chang Chang and Chun-Hao Tu and P. Wang and Chao-Cheng Lin and Min-Chen Chen and Hui-Chun Huang and Dershin Gan and N. J. Ho and Shih-Ching Chen and Shih-Cheng Chen},
  year={2011}
}
Abstract Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the… CONTINUE READING

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