Low temperature metallic state induced by electrostatic carrier doping of SrTiO3

@article{Nakamura2006LowTM,
  title={Low temperature metallic state induced by electrostatic carrier doping of SrTiO3},
  author={Hiroaki Nakamura and Isao H. Inoue and Y Takahashi and Tatsuo Hasegawa and Yoshinori Tokura and Hidenori Takagi},
  journal={Applied Physics Letters},
  year={2006},
  volume={89},
  pages={133504}
}
Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R◻∼10kΩ at low temperatures, with carrier mobility exceeding 1000cm2∕Vs. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior (dR∕dT>0). Results demonstrate an insulator to metal transition in SrTiO3 driven by electrostatic carrier density control. 
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