Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs

The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher ION over IOFF ratio for the strained device, achieving around three orders of magnitude higher value than the relaxed channel at 77 K thanks to the… (More)