Low-temperature gate dielectrics formed by plasma anodisation of silicon nitride

@inproceedings{Goswami1988LowtemperatureGD,
  title={Low-temperature gate dielectrics formed by plasma anodisation of silicon nitride},
  author={Ramasis Goswami and J. B. Butcher and Ravin Ginige and Jian Fa Zhang and Stephen Taylor and William Eccleston},
  year={1988}
}
Silicon nitrides, deposited on silicon by PECVD using an SiH4/NH3 plasma at 300°C, were anodised in an oxygen plasma at 500°C. The resulting dielectric appears to have lower fixed charge, leakage current and interface trap density than the original PECVD nitride, and to have the potential of use as a gate dielectric for MIS devices in VLSI circuits. 

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