Low-temperature diffusion of silver in InP

  title={Low-temperature diffusion of silver in InP},
  author={Brian Tuck and Paul R. Jay},
A series of experiments is described in which radioactive silver was diffused into the III-V semiconductor InP. Diffusion profiles were determined at 250 degrees C, 420 degrees C and 550 degrees C over a range of ambient phosphorus pressures. The solubility data suggest that the silver atoms sit on phosphorus sites in the crystal, although it is also possible to interpret the results in terms of the silver occurring in an atom-vacancy complex. The general shape of the diffusion profiles is… CONTINUE READING