Low temperature cofired ceramic: an enabler of high power RF integrated amplifiers

@article{Piel2002LowTC,
  title={Low temperature cofired ceramic: an enabler of high power RF integrated amplifiers},
  author={P. Piel and John D. Estes and Scott Marshall and Gerd-Uwe Funk and Anthony M. Pavio},
  journal={2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)},
  year={2002},
  volume={3},
  pages={1557-1560 vol.3}
}
Multi-layer ceramic technologies have been viewed recently as an enabler to increase the electrical functionality in a cost effective manner for high power discrete transistors. High power applications have stringent requirements on conductor losses, thermal characteristics and repeatability of design. We present a characterization of these factors and a preliminary definition of the boundary conditions for use in RF integrated amplifiers. 
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