Low-temperature chemical vapor deposition (CVD) of metallic titanium film from a novel precursor

@inproceedings{Guo2018LowtemperatureCV,
  title={Low-temperature chemical vapor deposition (CVD) of metallic titanium film from a novel precursor},
  author={Junjie Guo and Yafeng Yang and Qingshan Zhu and Chuanlin Fan and Pengpeng Lv and Maoqiao Xiang},
  year={2018}
}
Abstract The metallic Ti film was successfully deposited on the metal substrates at a temperature as low as 620 °C by developing a novel TiCl 2 precursor of chemical vapor deposition (CVD) from a Ti-TiCl 4 system, much lower than 1140 °C and 1200 °C reported. This is mainly attributed to the unique sublimation and decomposition of TiCl 2 at 620 °C. Increasing the deposition temperature above the evaporation temperature of 750 °C accelerated the formation of denser and thicker Ti film. A nearly… CONTINUE READING