Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions


In this work, we demonstrate the powerful methodology of electronic transport characterization in UTBB FD-SOI devices using cryogenic operation under interface coupling measurement condition. At first we study quantitatively the high-k/metal gate stack-induced transport behavior in long channel case, and, then we investigate the transport properties… (More)


6 Figures and Tables