Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

@article{Lim2005LowTC,
  title={Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs},
  author={Fredrik Lim{\'e} and François Andrieu and Jonathan Derix and G{\'e}rard Ghibaudo and Fr{\'e}d{\'e}ric Boeuf and Thomas Skotnicki},
  journal={Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.},
  year={2005},
  pages={525-528}
}
In this paper, a detailed investigation of the mobility in two different strained-Si technologies has been conducted. The mobility gain due to strain is nearly lost in short channel devices. The short channel loss observed in both cases is attributed to a bigger contribution of Coulomb scattering and to a larger subband splitting due to pocket implants. Finally, the mobility gain reduction with temperature lowering has been quantitatively interpreted by a simple analytical model accounting for… CONTINUE READING

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