Corpus ID: 9777059

Low temperature Aluminum induced crystallization process to get Polysilicon films for thin film transistor application in active matrix displays

  title={Low temperature Aluminum induced crystallization process to get Polysilicon films for thin film transistor application in active matrix displays},
  author={Hitesh Chelawat and A. S. Kumbhar and Subhrashis Adhikari and Hrishikesk Kelkar and Rajiv O. Dusane},
The realization of high information-content active matrix flat-panel displays (FPD’s) requires low temperature thin film transistor (TFT) process that is compatible with the thermal constraints imposed by common inexpensive glass panels. Aluminum induced crystallization (AIC) has been researched extensively for producing poly-Si from a-Si. In this paper Aluminuminduced crystallization (AIC) in amorphous silicon films deposited by Hot Wire CVD (HWCVD) on glass has been demonstrated .The samples… Expand

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It is suggested that the enhancement of the scattering cross section, which scales with the observed optical-absorption coefficient and diffuse elastic light scattering, is due to enhanced coupling of the electromagnetic field of the incident light to the charge-density fluctuations at the grain boundaries of the quasi-isolated crystallites. Expand
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