Corpus ID: 9777059

Low temperature Aluminum induced crystallization process to get Polysilicon films for thin film transistor application in active matrix displays

@inproceedings{Chelawat2006LowTA,
  title={Low temperature Aluminum induced crystallization process to get Polysilicon films for thin film transistor application in active matrix displays},
  author={Hitesh Chelawat and A. S. Kumbhar and Subhrashis Adhikari and Hrishikesk Kelkar and Rajiv O. Dusane},
  year={2006}
}
The realization of high information-content active matrix flat-panel displays (FPD’s) requires low temperature thin film transistor (TFT) process that is compatible with the thermal constraints imposed by common inexpensive glass panels. Aluminum induced crystallization (AIC) has been researched extensively for producing poly-Si from a-Si. In this paper Aluminuminduced crystallization (AIC) in amorphous silicon films deposited by Hot Wire CVD (HWCVD) on glass has been demonstrated .The samples… Expand

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References

SHOWING 1-9 OF 9 REFERENCES
Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon
Aluminum-induced crystallization of amorphous silicon (a-Si) is studied using various microscopy techniques and x-ray photoelectron spectroscopy. During the isothermal annealing of subsequentlyExpand
Metal-induced crystallization of amorphous silicon
The present invention provides an amorphous metal induced crystallization method. Amorphous silicon as a starting material, prepared through the corresponding pattern on the amorphous silicon LTOExpand
Metal-induced crystallization of amorphous silicon
Abstract We studied the Ni-silicide mediated crystallization of hydrogenated amorphous silicon (a-Si:H) in the presence of an electric field. The NiSi 2 precipitates were formed at temperatures lessExpand
High-Quality Polycrystalline Silicon Thin Film Prepared by a Solid Phase Crystallization Method
We succeeded, for the first time, in depositing a silicon film which features 1000A-wide single-crystalline grains embedded in a matrix of amorphous tissue. The deposition was done by plasma-enhancedExpand
Controlled growth of high-quality poly-silicon thin films with huge grains on glass substrates using an excimer laser
As the best results reported to date, high-quality poly-silicon thin film materials with huge grains have been fabricated on large-area glass substrates using the technique of excimer laserExpand
Laser crystallised poly-Si TFTs for AMLCDs
Abstract The technology for the fabrication of poly-Si TFTs on glass substrates has now reached a level of maturity such that the first commercial products are becoming available. The technologyExpand
Effect of grain boundaries on the Raman spectra, optical absorption, and elastic light scattering in nanometer-sized crystalline silicon.
  • Veprek, Sarott, Iqbal
  • Materials Science, Medicine
  • Physical review. B, Condensed matter
  • 1987
TLDR
It is suggested that the enhancement of the scattering cross section, which scales with the observed optical-absorption coefficient and diffuse elastic light scattering, is due to enhanced coupling of the electromagnetic field of the incident light to the charge-density fluctuations at the grain boundaries of the quasi-isolated crystallites. Expand
Metalinduced crystallization of amorphous silicon
  • Thin Solid Films
  • 2001
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