Low-subthreshold-swing tunnel transistors

  title={Low-subthreshold-swing tunnel transistors},
  author={Qin Zhang and Wei Zhao and Alan C. Seabaugh},
  journal={IEEE Electron Device Letters},
A formula is derived, which shows that the subthreshold swing of field-effect interband tunnel transistors is not limited to 60 mV/dec as in the MOSFET. This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these transistors. One of these principles suggests placing the gate adjacent to the tunnel junction. Modeling of this configuration verifies that sub… CONTINUE READING
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