Low resistivity ohmic contacts to moderately doped n-GaAs with low temperature processing

@inproceedings{Lovejoy1994LowRO,
  title={Low resistivity ohmic contacts to moderately doped n-GaAs with low temperature processing},
  author={Michael L. Lovejoy and Adriann J. Howard and Kevin R Zavadil and D. J. Rieger and Randy John Shul and Peter A. Barnes},
  year={1994}
}
A low-temperature process for forming ohmic contacts to moderately doped GaAs has been optimized using a PdGe metallization scheme. Minimum specific contact resistivity of 1.5 {times} 10{sup {minus}6} {minus}cm{sup 2} has been obtained with a low anneal temperature of 250 C. Results for optimizing both time and temperature are reported and compared to GeAu n-GaAs contacts. Material compositions was analyzed by x-ray photoelectron spectroscopy and circuit metal interconnect contact resisitivity… CONTINUE READING

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