Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

@inproceedings{Baron2000LowPC,
  title={Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices},
  author={Thierry Baron and François Martin and Pierre Mur and Ch. Wyon and M. Dupuy and C. Busseret and Abdelkader Souifi and G. Guillot},
  year={2000}
}
Abstract We present a comparative study of nucleation and growth of Si quantum dots on SiO 2 , SiO x N y and Si 3 N 4 substrates using silane low pressure chemical vapor deposition (LPCVD) at low temperature (570–610°C). The samples are investigated by atomic force micoscopy (AFM), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and spectroscopic ellipsometry (SE). We show that the chemical nature of the surface, precisely, the presence of SiO bonds… CONTINUE READING

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