Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks

@article{Ritzenthaler2012LowpowerDR,
  title={Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks},
  author={Romain Ritzenthaler and Tom Schram and Erik Bury and J{\'e}r{\^o}me Mitard and L.-{\AA}. Ragnarsson and Guido Groeseneken and Naoto Horiguchi and Aaron Thean and Alessio Spessot and C. Caillat and V. Srividya and Pierre Fazan},
  journal={2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)},
  year={2012},
  pages={242-245}
}
In this paper, the feasibility of High-k/Metal Gate (HKMG) Replacement Metal Gate (RMG) stacks for low power DRAM compatible transistors is assessed. It is shown that traditional RMG gate stacks cannot be used because of the additional anneal needed in a DRAM process. New solutions are developed, and a PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a Work Function of 4.95 eV. On the NMOS side, a new solution based on… CONTINUE READING