Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks.

@article{Campenhout2009Lowpower2X,
  title={Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks.},
  author={Joris Van Campenhout and William M. J. Green and Solomon Assefa and Yurii A. Vlasov},
  journal={Optics express},
  year={2009},
  volume={17 26},
  pages={24020-9}
}
We present an ultra-broadband Mach-Zehnder based optical switch in silicon, electrically driven through carrier injection. Crosstalk levels lower than -17 dB are obtained for both the 'on' and 'off' switching states over an optical bandwidth of 110 nm, owing to the implementation of broadband 50% couplers. Full 2 x 2 switching functionality is demonstrated, with low power consumption (approximately 3 mW) and a fast switching time (< 4 ns). The utilization of standard CMOS metallization results… CONTINUE READING
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