Low-noise performance of SiGe heterojunction bipolar transistors

@article{Schumacher1994LownoisePO,
  title={Low-noise performance of SiGe heterojunction bipolar transistors},
  author={Hermann Schumacher and U. Erben and Andreas Gruhle},
  journal={Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium},
  year={1994},
  pages={213-216}
}
We have demonstrated, for the first time, a microwave noise figure below 1 dB at 10 GHz from a heterojunction bipolar transistor. The current and frequency dependence of the results obtained agree with the well-established Hawkins theory for bipolar transistor noise performance. An enhanced equivalent noise circuit including major parasitics provides valuable insight for the optimization of these devices for low-noise operation. Typical applications may include integrated RF front-ends where… CONTINUE READING

Figures and Tables from this paper.

Citations

Publications citing this paper.
SHOWING 1-9 OF 9 CITATIONS

Vertical profile engineering and reliability study of silicon-germanium heterojunction bipolar transistors

VIEW 5 EXCERPTS
CITES BACKGROUND
HIGHLY INFLUENCED

SiGe Heterojunction Bipolar Transistor and Its Applications in Microwave Communication Systems

Noise Characteristics of 0.5 μm/50 GHz Si and 0.5 μm/70 GHz SiGe Bipolar Technologies

VIEW 1 EXCERPT
CITES RESULTS

HBT SiGe technology dedicated to ultra low phase noise applications

  • B. van Haaren, Andreas Gruhle, +5 authors Jacques Graffeuil
  • Materials Science
  • IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat.
  • 1997

A Ka-band GaInP/GaAs HBT four-stage low noise amplifier

References

Publications referenced by this paper.
SHOWING 1-4 OF 4 REFERENCES

Gruhle, Noise characterisation od Si/SiGe heterojunction bipolar transistors at microwave frequencies, Electr

  • H. Schumacher, A. U. Erben
  • 1992

Noise characterisation od Si / SiGe heterojunction bipolar transistors at microwave frequencies

  • U. Erben Schumacher, A. Gruhle
  • Electr . Lett .