Low noise ohmic contacts on n and p type GaSb

Abstract

Several metallization ~ystems for producing ohmic contacts onto Gasb have been investigated. The minimization of contact resistivity was respectively obtained with Au-Zn on p type and Au-Te on n type. It has been shown that these results are due to an overdoped layer at the semiconductor surface. Low frequency noise measurements pointed out that the… (More)

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Cite this paper

@inproceedings{Rolland2017LowNO, title={Low noise ohmic contacts on n and p type GaSb}, author={M. Rolland and S. Gaillard and E. Villemain and David Rigaud and M. Valenza}, year={2017} }