Low noise metamorphic HEMT devices and amplifiers on GaAs substrates

Abstract

Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC power giving a linearity figure of merit (LFOM) of 137) have been obtained for InAlAs-InGaAs metamorphic HEMTs on a GaAs substrate. These devices have been used to design and fabricate microwave and… (More)

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Cite this paper

@article{Marsh1999LowNM, title={Low noise metamorphic HEMT devices and amplifiers on GaAs substrates}, author={P. Marsh and S.L.G. Chu and S. Lardizabal and R. Leoni and S. Kang and R. Wohlert and A. M. Bowlby and W. E. Hoke and R. A. McTaggart and C. S. Whelan and P. J. Lemonias and P. M. McIntosh and T. E. Kazior}, journal={1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)}, year={1999}, volume={1}, pages={105-108 vol.1} }